features ezbright power chip led rf performance 200 mw min. & 260 mw min. C 450 nm 180 mw min. & 240 mw min. C 460 nm 160 mw min. & 220 mw min. C 470 nm lambertian radiation conductive epoxy, solder paste or preforms, or flux eutectic attach thin 100 m chip low forward voltage C 3.6 v typical at 350 ma single wire bond structure 1000 v esd threshold rating ? C C C ? ? ? ? ? ? applications general illumination aircraft decorative lighting task lighting outdoor illumination white leds crosswalk signals backlighting automotive ? C C C C ? ? ? ? cree ? ez700? led data sheet c xxx ez700-s xx 000 crees ezbright? leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary optical design and device technology to deliver superior value for high-intensity leds. the optical design maximizes light extraction effciency and enables a lambertian radiation pattern. additionally, these leds are die attachable with conductive epoxy, solder paste or solder preforms, in addition to using the fux eutectic method. these vertically structured, low forward voltage led chips are approximately 100 microns in height. crees ez? chips are tested for conformity to optical and electrical specifcations and the ability to withstand 1000 v esd. these leds are useful in a broad range of applications, such as general illumination, automotive lighting and lcd backlighting. c xxx ez700-sxx000 chip diagram top view bottom view ezbright led chip 680 x 680 m t = 100 m backside metallization gold bond pad 130 x 130 m die cross section anode (+); 3 m ausn cathode (-) d a t a s h e e t : c p r 3 d f r e v . a subject to change without notice. www.cree.com
copyright ? 2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez700 are trademarks of cree, inc. cpr3df rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 5c note c xxx ez700-s xx 000 dc forward current 500 ma peak forward current 1000 ma note 4 led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +120c electrostatic discharge threshold rating (hbm) note 2 1000 v typical electrical/optical characteristics at t a = 5c, if = 350 ma note 3 part number forward voltage (v f , v) reverse current [i(vr=5 v), a] full width half max ( d , nm) min. typ. max. max. typ. c450ez700-s xx 000 3.0 3.6 3.9 2 21 c460ez700-s xx 000 3.0 3.6 3.9 2 21 c470ez700-s xx 000 3.0 3.6 3.9 2 22 mechanical specifcations c xxx ez700-s xx 000 description dimension tolerance p-n junction area (m) 650 x 650 25 chip area (m) 680 x 680 25 chip thickness (m) 100 25 top au bond pad (m) 130 x 130 15 au bond pad thickness (m) 3.0 1.0 back contact metal area (m) 680 x 680 25 back contact metal thickness (m) 3.0 1.0 notes: maximum ratings are package-dependent. the above ratings were determined using a au-plated to39 header without an encapsulant for characterization. ratings for other packages may differ. the junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). see cree ezbright applications note for assembly-process information. product resistance to electrostatic discharge (esd) according to the hbm is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the minimum esd ratings shown. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 350 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. all measurements were made using a au-plated to39 header without an encapsulant. optical characteristics measured in an integrating sphere using illuminance e. this peak forward current specifcation is based on a 400 ms pulse width at a 1/5-duty cycle with a junction temperature of 65c. 1. 2. 3. 4.
copyright ? 2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez700 are trademarks of cree, inc. 3 cpr3df rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx ez700-s xx 000 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez700-s xx 000) orders may be flled with any or all bins (c xxx ez700-0 xxx ) contained in the kit. all radiant fux and all dominant wavelength values shown and specifed are at if = 350 ma. radiant fux values are measured using au-plated to39 headers without an encapsulant. c450ez700-s0000 c450ez700-0213 c450ez700-0214 c450ez700-0215 c450ez700-0216 c450ez700-0209 c450ez700-0210 c450ez700-0211 c450ez700-0212 c450ez700-0205 c450ez700-0206 c450ez700-0207 c450ez700-0208 260 mw 240 mw 220 mw 200 mw dominant wavelength radiant flux 447.5 nm 450 nm 452.5 nm 445 nm 455 nm c450ez700-s6000 c450ez700-0221 c450ez700-0222 c450ez700-0223 c450ez700-0224 c450ez700-0217 c450ez700-0218 c450ez700-0219 c450ez700-0220 300 mw 280 mw 260 mw dominant wavelength radiant flux 447.5 nm 450 nm 452.5 nm 445 nm 455 nm
copyright ? 2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez700 are trademarks of cree, inc. 4 cpr3df rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx ez700-s xx 000 (continued) c470ez700-s6000 c470ez700-0205 c470ez700-0206 c470ez700-0207 c470ez700-0208 c470ez700-0201 c470ez700-0202 c470ez700-0203 c470ez700-0204 220 mw 200 mw 160 mw dominant wavelength radiant flux 467.5 nm 470 nm 472.5 nm 465 nm 475 nm c460ez700-s8000 c460ez700-0209 c460ez700-0210 c460ez700-0211 c460ez700-0212 c460ez700-0205 c460ez700-0206 c460ez700-0207 c460ez700-0208 c460ez700-0201 c460ez700-0202 c460ez700-0203 c460ez700-0204 240 mw 220 mw 200 mw 180 mw dominant wavelength radiant flux 457.5 nm 460 nm 462.5 nm 455 nm 465 nm c460ez700-s4000 c460ez700-0217 c460ez700-0218 c460ez700-0219 c460ez700-0220 c460ez700-0213 c460ez700-0214 c460ez700-0215 c460ez700-0216 280 mw 260 mw 240 mw dominant wavelength radiant flux 457.5 nm 460 nm 462.5 nm 455 nm 465 nm c470ez700-s000 c470ez700-0217 c470ez700-0218 c470ez700-0219 c470ez700-0220 c470ez700-0213 c470ez700-0214 c470ez700-0215 c470ez700-0216 c470ez700-0209 c470ez700-0210 c470ez700-0211 c470ez700-0212 280 mw 260 mw 240 mw 220 mw dominant wavelength radiant flux 467.5 nm 470 nm 472.5 nm 465 nm 475 nm
copyright ? 2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez700 are trademarks of cree, inc. 5 cpr3df rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the ezbright power chip led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. cpr3df rev. - ? 2006 cree, inc. all rights reserved. ezbright technology ezbright power chip led c xxx ez700-s xx 000 characteristic curves -0.4 -0.3 -0.2 -0.1 0 25 50 75 100 125 junction temperature (c) voltage shift (v) voltage shift vs junction temperature 0 1 2 3 4 5 25 50 75 100 125 junction temperature (c) dominant wavelength shift (nm) dominant wavelength shift vs junction temperature 75 80 85 90 95 100 25 50 75 100 125 junction temperature (c) relative light intensity (%) relative light intensity vs junction temperature forward current vs forward voltage 0 50 100 150 200 250 300 350 400 450 500 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 vf (v) if (ma) relative intensity vs forward current 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 350 400 450 500 if (ma) % relative intensity -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 250 300 350 400 450 500 if (ma) shift (nm) dominant wavelength shift vs forward current
copyright ? 2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez700 are trademarks of cree, inc. 6 cpr3df rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com radiation pattern this is a representative radiation pattern for the ezbright power chip led product. actual patterns will vary slightly for each chip.
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